3C907 Category 3C
Epitaxial materials consisting of a “substrate” having at least one epitaxially grown layer of any of the following (see List of Items Controlled).
Category 3: Electronics
Reasons for control
- NS: National security
- RS: Regional stability
- AT: Anti-terrorism
Country chart
| Control | Column |
|---|---|
| AT applies to entire entry. | AT 1 |
| NS applies to entire entry | None |
| RS applies to the entire entry | None |
List-based license exceptions
| Exception | As stated in the entry |
|---|---|
| GBS | N/A IEC: Yes, see § 740.2(a)(22) and § 740.24 of the EAR. |
| LVS | N/A |
Items
- a. Silicon having an isotopic impurity less than 0.08% of silicon isotopes other than silicon-28 or silicon-30; or
- b. Germanium having an isotopic impurity less than 0.08% of germanium isotopes other than germanium-70, germanium-72, germanium-74, or germanium-76.
Related controls
See ECCN 3E901 for related technology controls for the “development” or “production” of this ECCN.
Source: eCFR, version
2026-08-01, retrieved
2026-08-20T04:04:59+00:00.