3C002 Category 3C
Resist materials as follows (see List of Items Controlled) and “substrates” coated with the following resists.
Category 3: Electronics
Reasons for control
- NS: National security
- AT: Anti-terrorism
Country chart
List-based license exceptions
| Exception | As stated in the entry |
|---|---|
| GBS | Yes for 3C002.a provided that they are not also controlled by 3C002.b through .e. |
| LVS | $3,000 |
Items
- Items: a. Resists designed for semiconductor lithography as follows:
- a.1. Positive resists adjusted (optimized) for use at wavelengths less than 193 nm but equal to or greater than 15 nm;
- a.2. Resists adjusted (optimized) for use at wavelengths less than 15 nm but greater than 1 nm;
- b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0.01 µcoulomb/mm 2 or better;
- c. [Reserved]
- d. All resists optimized for surface imaging technologies;
- e. All resists designed or optimized for use with imprint lithography equipment specified by 3B001.f.2 that use either a thermal or photo-curable process.
Related controls
N/A
Source: eCFR, version
2026-08-01, retrieved
2026-08-20T04:04:59+00:00.