3C001 Category 3C

Hetero-epitaxial materials consisting of a “substrate” having stacked epitaxially grown multiple layers of any of the following (see List of Items Controlled).

Category 3: Electronics

Reasons for control

NS: National security
AT: Anti-terrorism

Country chart

Control	Column
AT applies to entire entry	AT 1
NS applies to entire entry	NS 2

List-based license exceptions

Exception	As stated in the entry
GBS	N/A
LVS	$3,000

Items

a. Silicon (Si);
b. Germanium (Ge);
c. Silicon Carbide (SiC); or
d. “III/V compounds” of gallium or indium.
e. Gallium Oxide (Ga2O3); or
f. Diamond.

Related controls

(1) This entry does not control equipment or material whose functionality has been unalterably disabled. (2) See also ECCNs 3C907 (Epitaxial materials), 3C908 (Fluorides, hydrides, chlorides, of silicon or germanium), and 3C909 (Silicon, silicon oxides, germanium or germanium oxides).

Notes

Note: 3C001.d does not apply to a “substrate” having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.

N.B.: For materials having layers of isotopically enriched Silicon or Germanium isotopes, see 3C907.

Source: eCFR, version 2026-08-01, retrieved 2026-08-20T04:04:59+00:00.