3E003 Category 3E
Other “technology” for the “development” or “production” of the following (see List of Items Controlled).
Category 3: Electronics
Country chart
List-based license exceptions
| Exception | As stated in the entry |
|---|---|
| TSR | Yes, except .f and .g |
Items
- a. Vacuum microelectronic devices;
- b. Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;
- Note: 3E003.b does not control “technology” for high electron mobility transistors (HEMT) operating at frequencies lower than 31.8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31.8 GHz.
- c. “Superconductive” electronic devices;
- d. Substrates of diamond for electronic components;
- e. Substrates of Silicon-On-Insulator (SOI) for integrated circuits in which the insulator is Silicon Dioxide (SiO2);
- f. Substrates of Silicon Carbide (SiC) for electronic components;
- g. “Vacuum electronic devices” operating at frequencies of 31.8 GHz or higher;
- h. Substrates of Gallium Oxide (Ga2O3) for electronic components.
Related controls
See 3E001 for Silicon-On-Insulation (SOI) technology for the “development” or “production” related to radiation hardening of integrated circuits.
Source: eCFR, version
2026-08-01, retrieved
2026-08-20T04:04:59+00:00.