3B994 Category 3B

Semiconductor manufacturing equipment that enables “advanced-node integrated circuit” production, as follows (see list of items controls), and “specially designed” “components” and “accessories” therefor.

Category 3: Electronics

Reasons for control

• RS: Regional stability
• AT: Anti-terrorism

Country chart

Items

1. a. [Reserved]
2. b. Semiconductor wafer fabrication equipment designed for ion implantation of 300mm wafers as follows:
3. b.1. [Reserved]
4. b.2. Ion implantation equipment as follows:
5. b.2.a. Having all of the following:
6. b.2.a.1. Beam current greater than 1uA and less than 5mA; and
7. b.2.a.2. Beam energy greater than 5 keV and less than 300 keV; or
8. b.2.b. Having all of the following:
9. b.2.b.1. Beam current greater than 5 mA; and
10. b.2.b.2. Beam energy less than 5 keV; or
11. b.2.c. Having angular accuracy equal to or less (better) than 0.1 degrees.
12. c. through p. [Reserved]
13. q. Inspection and metrology equipment as follows:
14. q.1. and q.2. [Reserved]
15. q.3. Optical thin film metrology equipment or optical critical dimension metrology equipment designed for 300mm wafers and containing software designed for measuring non-planar transistors.

Related controls

(1) See ECCNs 3D994 and 3E994 for associated software and technology controls. (2) For additional controls that apply to this ECCN, see also § 744.11(a)(2)(v) and § 744.23(a)(4) of the EAR.

Notes

Note for 3B994: Equipment specified in this ECCN 3B994 are limited to equipment designed for volume production, such as equipment designed to accept a SEMI standard wafer carrier such as a 200 mm or larger Front Opening Unified Pod or be connected to a multi-chamber wafer handling system.

Source: eCFR, version 2026-08-01, retrieved 2026-08-20T04:04:59+00:00.